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FR12D02 Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part # FR12D02
Description  Silicon Fast Recovery Diode
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

FR12D02 Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  FR12D02 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. FR12D02 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. FR12D02 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 100 V - 600 V
IF = 12 A
Features
• High Surge Capability
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
FR12B(R)02
FR12D(R)02
FR12G(R)02
Unit
Repetitive peak reverse
voltage
VRRM
100
200
400
V
RMS reverse voltage
VRMS
70
140
280
V
2. Reverse polarity (R): Stud is anode.
• Types from 100 V to 600 V VRRM
FR12B02 thru FR12JR02
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Fast
Recovery Diode
FR12J(R)02
600
420
DC blocking voltage
VDC
100
200
400
V
Continuous forward current
IF
12
12
12
A
Operating temperature
Tj
-55 to 150
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
-55 to 150
°C
Parameter
Symbol
FR12B(R)02
FR12D(R)02
FR12G(R)02
Unit
Diode forward voltage
0.8
0.8
0.8
25
25
25
μA
66
6
mA
Recovery Time
Maximum reverse recovery
time
TRR
200
200
200
nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.5
2.5
2.5
°C/W
Reverse current
IR
VF
IF,SM
180
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
VR = 100 V, Tj = 150 °C
V
VR = 100 V, Tj = 25 °C
IF = 12 A, Tj = 25 °C
TC ≤ 100 °C
Conditions
180
180
TC = 25 °C, tp = 8.3 ms
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
25
6
250
2.5
A
180
-55 to 150
-55 to 150
FR12J(R)02
0.8
600
12
www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1


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