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FZT968 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part No. FZT968
Description  SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
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Maker  ETC2 [List of Unclassifed Manufacturers]
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SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 – OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
PARTMARKING DETAIL – FZT968
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-20
A
Continuous Collector Current
IC
-6
A
Power Dissipation at Tamb=25°C
Ptot
3W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
-15
-28
V
IC=-100µA
V(BR)CEO
-12
-20
V
IC=-10mA*
V(BR)EBO
-6
-8
V
IE=-100µA
Collector Cut-Off Current
ICBO
-10
-1.0
nA
µ
A
VCB=-12V
VCB=-12V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-65
-132
-360
-130
-170
-450
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1050 -1200 mV
IC=-6A, IB=-250mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-870
-1050 mV
IC=-6A, VCE=-1V*
Static Forward Current
Transfer Ratio
hFE
300
300
200
150
450
450
300
240
50
1000
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
Transition Frequency
fT
80
MHz
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Cobo
161
pF
VCB=-20V, f=1MHz
Switching Times
ton
toff
120
116
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 294
FZT968
C
C
E
B
1m
100
1m
100
1m
100
0.1
100
100
1m
IC - Collector Current (A)
VCE(sat) v IC
0
0.4
0.8
+25 °C
-55 °C
800
400
+100 °C
0
IC - Collector Current (A)
hFE v IC
+25 °C
+100 °C
1.4
0.7
-55 °C
0
IC - Collector Current (A)
VBE(on) v IC
+25 °C
-55 °C
+100 °C
IC - Collector Current (A)
VCE(sat) v IC
+100 °C
+25 °C
0
IC - Collector Current (A)
VBE(sat) v IC
1s
100ms
100
DC
0.1
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
V+-=1V
+25 °C
I+/I*=50
V+-=1V
-55 °C
I+/I*=50
10m
100m
1
10
0.2
0.6
I+/I*=10
I+/I*=50
I+/I*=100
I+/I*=200
I+/I*=250
0.8
0.6
0.4
0.2
0
1m
10m
100m
1
10
100
10m
100m
1
10
200
600
10m
100m
1
10
0.4
0.8
1.2
1.6
10m
100m
1
10
110
1
10
TYPICAL CHARACTERISTICS
3 - 295
FZT968




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