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HLB122T Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics

Part No. HLB122T
Description  NPN Triple Diffused Planar Type High Voltage Transistor
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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HLB122T Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200208
Issued Date : 1998.07.01
Revised Date : 2002.05.08
Page No. : 1/3
HLB122T
HSMC Product Specification
HLB122T
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122T is a medium power transistor designed for use in switching
applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings (Ta=25
°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25
°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 6 V
IC Collector Current (DC)............................................................................................................ 800 mA
IC Collector Current (Pulse)...................................................................................................... 1600 mA
IB Base Current (DC).................................................................................................................. 100 mA
IB Base Current (Pulse) .............................................................................................................. 200 mA
Characteristics (Ta=25
°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA
BVCEO
400
-
-
V
IC=10mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
10
uA
VCB=600V
ICEO
-
-
10
uA
VCE=400V
IEBO
-
-
10
uA
VEB=6V
*VCE(sat)1
-
-
400
mV
IC=100mA, IB=20mA
*VCE(sat)2
-
-
800
mV
IC=300mA, IB=60mA
*VBE(sat)
-
-
1
V
IC=100mA, IB=20mA
*hFE1
10
-
40
VCE=10V, IC=0.1A
*hFE2
10
-
-
VCE=10V, IC=0.5A
tf
-
-
0.6
uS
VCC=100V, IC=0.3A,IB1=-IB2=0.06A
*Pulse Test: Pulse Width
≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
B1
B2
B3
B4
B5
B6
Range
10-17
13-22
18-27
23-32
28-37
33-40
TO-126


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