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HLB1211 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics

Part No. HLB1211
Description  NPN Triple Diffused Planar Type High Voltage Transistors 
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Maker  HSMC [Hi-Sincerity Mocroelectronics]
Homepage  http://www.hsmc.com.tw
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HLB1211 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics

   
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9027-B
Issued Date : 1996.11.06
Revised Date : 2000.11.01
Page No. : 1/3
HSMC Product Specification
HLB121I
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121I is a medium power transistor designed for use in
switching applications.
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings (Ta=25
°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................................... +150
°C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25
°C) .................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 600 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ........................................................................................... 6 V
IC Collector Current (DC)............................................................................................... 300 mA
IC Collector Current (Pulse)........................................................................................... 600 mA
IB Base Current (DC)....................................................................................................... 40 mA
IB Base Current (Pulse)................................................................................................. 100 mA
Characteristics (Ta=25
°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA
BVCEO
400
-
-
V
IC=10mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
10
uA
VCB=550V
ICEO
-
-
10
uA
VCB=400V
IEBO
-
-
10
uA
VEB=6V
*VCE(sat)1
-
-
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV
IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V
IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test : Pulse Width
≤380us, Duty Cycle≤2%


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