HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6016

Issued Date : 1996.04.12

Revised Date : 2002.02.26

Page No. : 1/3

HJ50

HSMC Product Specification

HJ50

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HJ50 is designed for line operated audio output amplifier switch

mode power supply drivers and other switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 15 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 500 V

BVCEO Collector to Emitter Voltage.................................................................................. 400 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current .............................................................................................................. 1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

500

-

-

V

IC=1mA

BVCEO

400

-

-

V

IC=30mA

BVEBO

5

-

-

V

IC=100uA

ICES

-

-

100

uA

VCE=500V

ICEO

-

-

200

uA

VCE=300V

IEBO

-

-

1

mA

VEB=5V

*VCE(sat)

-

-

1

V

IC=1A, IB=0.2A

*VBE(on)

-

-

1.5

V

VCE=10V, IC=1A

*hFE1

30

-

150

VCE=10V, IC=0.3A

*hFE2

10

-

-

VCE=10V, IC=1A

fT

10

-

-

MHz

VCE=10V, IC=200mA, f=2MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-252