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HE8050 Datasheet(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HE8050 Datasheet(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
1 / 3 page HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6112 Issued Date : 1992.09.30 Revised Date : 2001.08.13 Page No. : 1/3 HE8050 HSMC Product Specification HE8050 NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. Features • High total power dissipation (PT: 2W, TC=25°C) • High collector current (IC: 1.5A) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25 °C) ...................................................................................... 1 W • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 40 V VCEO Collector to Emitter Voltage ..................................................................................... 25 V VEBO Emitter to Base Voltage ............................................................................................. 6 V IC Collector Current ........................................................................................................... 1.5 A IB Base Current ............................................................................................................. 500 mA Characteristics (Ta=25 °C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 40 - - V IC=100uA BVCEO 25 - - V IC=2mA BVEBO 6 - - V IE=100uA ICBO - 100 nA VCB=35V IEBO - -- 100 nA VEB=6V *VCE(sat) - - 0.5 V IC=0.8A, IB=80mA *VBE(sat) - - 1.2 V IC=0.8A, IB=80mA VBE(on) - - 1 V VCE=1V, IC=10mA *hFE1 45 - - VCE=1V, IC=5mA *hFE2 85 - 500 VCE=1V, IC=100mA *hFE3 40 - - VCE=1V, IC=800mA fT 100 - - MHz VCE=10V, IC=50mA *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification on hFE2 Rank B C D E Range 85-160 120-200 160-320 250-500 |
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