SANGDEST

MICROELECTRONICS

Technical Data

Green Products

Data Sheet N0090 Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

SB3150

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

SB3150

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

150

V

Maximum RMS Voltage

105

V

Average Rectified Output Current

(Note 1)

Io

3.0

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

110

A

Forward Voltage

0.89

V

Peak Reverse Current

At Rated DC Blocking Voltage

1.0

7.0

mA

Typical Junction Capacitance (Note 2)

200

pF

Max. Voltage Rate of Change

dv/dt

10,000

V/µs

Typical Thermal Resistance Junction to Ambient

25

K/W

Storage Temperature Range

-50 to +150

°C

Approximate Weight

wt

1.02

g

Case Style

DO-201AD

Note:1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.