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2SC3420_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3420_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3420 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector cutoff current VCB=40V;IE=0 100 nA IEBO Emitter cutoff current VEB=8V;IC=0 100 nA V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 20 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.1A 1 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V hFE-1 DC current gain IC=0.5A ; VCE=2V 140 600 hFE-2 DC current gain IC=4A ; VCE=2V 70 COb Output capacitance IE=0; VCB=10V;f=1MHz 40 pF fT Transition frequency IC=0.5A ; VCE=2V, 100 MHz hFE-1 Classifications Y GR BL 140-240 200-400 300-600 |
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