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INA-54063 Datasheet(PDF) 5 Page - Agilent(Hewlett-Packard)

Part No. INA-54063
Description  3.0 GHz Low Noise Silicon MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

INA-54063 Datasheet(HTML) 5 Page - Agilent(Hewlett-Packard)

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INA-54063 Applications
Information
Introduction
The INA-54063 is a silicon RFIC
amplifier that is designed with an
internal resistive feedback
network to provide a 50
Ω input
and near 75
Ω output impedance.
With a 1-dB compressed Output
Power of 8 dBm and Noise Figure
of 5 dB, the INA-54063 is well
suited for amplifier applications
requiring high dynamic ranges.
A unique feature of the INA-54063
is a positive gain slope over the
1–2 GHz range that is useful in
many satellite-based TV and
datacom systems. When used for
the IF amplifier, the up-slope in
the gain of the INA-54063 is
intended to compensate for the
negative gain slope in many Low
Noise Block downconverters
(LNB) used in consumer and
commercial TV delivery systems,
such as DDS, DBS, and TVRO.
The positive gain slope can also
compensate for the high fre-
quency attenuation characteris-
tics of 75
Ω cables used to
connect the outdoor LNBs to
indoor set-top converters.
In addition to use in TV delivery
systems, the INA-54063 will find
many applications in 50
Ω input-
50
Ω output gain and buffer
stages in wireless communica-
tions systems.
Operating Details
The INA-54063 is a voltage biased
device that operates from a
+5 volt power supply with a
typical current drain of 29 mA. All
bias regulation circuitry is
integrated into the RFIC.
Figure 9 shows a typical imple-
mentation of the INA-54063. The
supply voltage for the INA-54063
must be applied to two terminals,
the Vcc pin and the RF Output pin.
RF
INPUT
RFC
Vd
Cblock
Cbypass
Cblock
RF
OUTPUT
Figure 9. Basic Amplifier
Application.
The Vd connection to the ampli-
fier is RF bypassed by placing a
capacitor to ground near the Vd
pin of the amplifier package.
The power supply connection to
the RF Output pin is achieved by
means of an RF choke (inductor).
The value of the RF choke must
be large relative to 50/75
Ω in
order to prevent loading of the RF
Output.
The supply voltage end of the RF
choke is bypassed to ground with
a capacitor. If the physical layout
permits, this can be the same
bypass capacitor that is used at
the Vd terminal of the amplifier.
Blocking capacitors are normally
placed in series with the RF Input
and the RF Output to isolate the
DC voltages on these pins from
circuits adjacent to the amplifier.
The values for the blocking and
bypass capacitors are selected to
provide a reactance at the lowest
frequency of operation that is
small relative to 50
Ω.
Example Layout for 50
Amplifier
An example layout for an ampli-
fier using the INA-54063 with
50
Ω input and 50 Ω output is
shown in Figure 10.
INPUT
OUTPUT
INA-5XX63 DEMO BOARD
05/95
Vcc
H
Figure 10. RF Layout for 50
Ω Input
and Output.
This example uses a
microstripline design (solid
groundplane on the back side of
the circuit board). The circuit
board material is 0.031-inch thick
FR-4. Plated through holes (vias)
are used to bring the ground to
the top side of the circuit where
needed. Multiple vias are used to
reduce the inductance of the path
to ground.
Figure 11 shows an assembled
amplifier. The +5 volt supply
(Vcc) is fed directly into the Vd
pin of the INA-54063 and into the
RF Output pin through the RF
choke (RFC). Capacitor C3
provides RF bypassing for both
the Vd pin and the power supply
end of the RFC.


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