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IXDI430 Datasheet(PDF) 11 Page - IXYS Corporation |
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IXDI430 Datasheet(HTML) 11 Page - IXYS Corporation |
11 / 12 page 11 IXDN430 / IXDI430 / IXDD430 / IXDS430 Short Circuit di/dt Limit A short circuit in a high-power MOSFET module such as the VM0580-02F, (580A, 200V), as shown in Figure 27, can cause the current through the module to flow in excess of 1500A for 10 µs or more prior to self-destruction due to thermal runaway. For this reason, some protection circuitry is needed to turn off the MOSFET module. However, if the module is switched off too fast, there is a danger of voltage transients occuring on the drain due to Ldi/dt, (where L represents total inductance in series with drain). If these voltage transients exceed the MOSFET's voltage rating, this can cause an avalanche break- down. The IXDD430 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. Thus, the IXDD430 helps to prevent device destruction from both dangers; over-current, and avalanche breakdown due to di/dt induced over-voltage transients. The IXDD430 is designed to not only provide ±30A under normal conditions, but also to allow it's output to go into a high impedance state. This permits the IXDD430 output to control a separate weak pull-down circuit during detected overcurrent shutdown conditions to limit and separately control d VGS/dt gate turnoff. This circuit is shown in Figure 28. Referring to Figure 28, the protection circuitry should include a comparator, whose positive input is connected to the source of the VM0580-02. A low pass filter should be added to the input of the comparator to eliminate any glitches in voltage caused by the inductance of the wire connecting the source resistor to ground. (Those glitches might cause false triggering of the comparator). The comparator's output should be connected to a SRFF(Set Reset Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000-series devices operate with a V CC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD430 again. This Reset can be generated by connecting a One Shot circuit between the IXDD430 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD430 input, and this pulse will reset the SRFF outputs to normal operation. When a short circuit occurs, the voltage drop across the low- value, current-sensing resistor, (Rs=0.005 Ohm), connected between the MOSFET Source and ground, increases. This triggers the comparator at a preset level. The SRFF drives a low input into the Enable pin disabling the IXDD430 output. The SRFF also turns on the low power MOSFET, (2N7000). In this way, the high-power MOSFET module is softly turned off by the IXDD430, preventing its destruction. APPLICATIONS INFORMATION Supply Bypassing and Grounding Practices, Output Lead inductance When designing a circuit to drive a high speed MOSFET utilizing the IXDD430/IXDI430/IXDN430, it is very important to keep certain design criteria in mind, in order to optimize performance of the driver. Particular attention needs to be paid to Supply Bypassing, Grounding, and minimizing the Output Lead Inductance. Say, for example, we are using the IXDD430 to charge a 15nF capacitive load from 0 to 25 volts in 25ns. Using the formula: I= C ∆V / ∆t, where ∆V=25V C=15nF & ∆t=25ns we can determine that to charge 15nF to 25 volts in 25ns will take a constant current of 15A. (In reality, the charging current won’t be constant, and will peak somewhere around 30A). SUPPLYBYPASSING In order for our design to turn the load on properly, the IXDD430 must be able to draw this 5A of current from the power supply in the 25ns. This means that there must be very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value that is a magnitude larger than the load capacitance. Usually, this would be achieved by placing two different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current-service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDD430 to an absolute minimum. GROUNDING In order for the design to turn the load off properly, the IXDD430 must be able to drain this 5A of current into an adequate grounding system. There are three paths for returning current that need to be considered: Path #1 is between the IXDD430 and it’s load. Path #2 is between the IXDD430 and it’s power supply. Path #3 is between the IXDD430 and whatever logic is driving it. All three of these paths should be as low in resistance and inductance as possible, and thus as short as practical. In addition, every effort should be made to keep these three ground paths distinctly separate. Otherwise, (for instance), the returning ground current from the load may develop a voltage that would have a detrimental effect on the logic line driving the IXDD430. |
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