IXBOD1-28RD datasheet(4/8 Pages) IXYS

Part #	IXBOD1-28RD

Description	Breakover Diodes

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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H - 4

Symbol

Test Conditions

2 BODs

3 BODs

4 BODs

D-Version

I

D

T

VJ

=

125°C;V = 0,8x V

BO

100

µA

V

BO

V

BO(TVJ) = VBO, 25°C [1 + KT (TVJ - 25°C)]

I

RMS

f = 50 HZ;

T

amb = 50°C

2.0

1.4

1.1

0.3

A

connection pins soldered to printed circuit

(conductor 0,035x2mm)

I

AVM

1.25

0.9

0.7

0.2

A

I

SM

t

p = 0.1 ms;

T

amb

= 50°C non repetitive

200

50

A

I²t

t

p = 0.1 ms;

T

amb = 50°C

2

0.125

A2s

V

T

VJ =125°C; IT = 5A

3.4

5.1

6.8

27

V

(TO)

For power-loss calculations only

2.2

3.3

4.4

17.5

V

r

T

VJ =125°C

0.24

0.36

0.48

3

Ω

T

amb

-40...+125

°C

T

stg

-40...+125

°C

T

VJm

125

°C

K

T

Temperatur coefficient of V

BO

2·10-3

K-1

K

P

coefficient for energy per pulse E

P (material constant)

700

K/Ws

R

thJA

- natural convection

20

K/W

- with air speed 2 m/s

16

K/W

Weight

typical

14

g

Breakover Diode Modules

V

BO

Standard

BOD -

V

Types

Elements

1200 ±50

IXBOD 1 -12R(D)

2

1300 ±50

IXBOD 1 -13R(D)

2

1400 ±50

IXBOD 1 -14R(D)

2

1500 ±50

IXBOD 1 -15R(D)

2

1600 ±50

IXBOD 1 -16R(D)

2

1700 ±50

IXBOD 1 -17R(D)

2

1800 ±50

IXBOD 1 -18R(D)

2

1900 ±50

IXBOD 1 -19R(D)

2

V

BO

Standard

BOD -

V

Types

Elements

2000 ±50

IXBOD 1 -20R(D)

3

2100 ±50

IXBOD 1 -21R(D)

3

2200 ±50

IXBOD 1 -22R(D)

3

2300 ±50

IXBOD 1 -23R(D)

3

2400 ±50

IXBOD 1 -24R(D)

3

2500 ±50

IXBOD 1 -25R(D)

3

2600 ±100 IXBOD 1 -26R(D)

3

2800 ±100 IXBOD 1 -28R(D)

3

3000 ±100 IXBOD 1 -30R(D)

3

3200 ±100 IXBOD 1 -32R(D)

3

V

BO

Standard

BOD -

V

Types

Elements

3400 ±100 IXBOD 1 -34R

4

3600 ±100 IXBOD 1 -36R

4

3800 ±100 IXBOD 1 -38R

4

4000 ±100 IXBOD 1 -40R

4

4200 ±100 IXBOD 1 -42R

4

Symbol

Test Conditions

Characteristic Values both Versions R & RD

2 BODs

3 BODs

4 BODs

I

BO

T

VJ =25°C

151515

mA

I

H

T

VJ =25°C

303030

mA

V

H

T

VJ =25°C

4 - 8

V

(dv/dt)

C

T

VJ =50°C;

V

D = 0.67·(VBO + 100V)

- V

BO

bis 1500V

> 1000

-

V/µs

- V

BO 1600 - 2000V

> 1500

-

V/µs

- V

BO 2100 - 2500V

-

> 2000

-

V/µs

- V

BO 2600 - 3000V

-

> 2500

-

V/µs

- V

BO 3200 - 3400V

-

> 3000

V/µs

- V

BO 3600 - 4200V

-

> 3500

V/µs

(di/dt)

C

T

VJ = 125°C;

V

D = VBO ; IT = 80A; f = 50 Hz

200

A/µs

t

q(typ)

T

VJ =

125°CV

D =

0.67·V

BO ; VR = 0V

150

µs

dv/dt

(lin.) = 200V/µs; IT = 80A; di/dt = -10A/µs

IXBOD 1 -12R...42R(D)

2-3 BODs

Version: R

Version: RD

IXYS reserve at these the right to change limits, test conditions and dimensions; Data according to IEC 60747

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