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INA-50311 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. INA-50311
Description  1 GHz Low Noise Silicon MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-50311 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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6-147
Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VCC
Device Voltage, to ground
V
12
Pin
CW RF Input Power
dBm
+13
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
INA-50311 Electrical Specifications[3], TC = 25°C, ZO = 50 Ω, VCC = 5 V
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (|S21|2)
f = 900 MHz
dB
16.5
19
NF
Noise Figure
f = 900 MHz
dB
3.6
P1dB
Output Power at 1 dB Gain Compression
f = 900 MHz
dBm
0
IP3
Third Order Intercept Point
f = 900 MHz
dBm
+10
VSWR
Input VSWR
f = 900 MHz
1.5
Output VSWR
f = 900 MHz
1.2
Icc
Device Current
mA
17
22
ι
d
Group Delay
f = 900 MHz
ps
320
INA-50311 Typical Scattering Parameters[3], TC = 25°C, ZO = 50 Ω, VCC = 5 V
Freq.
S11
S21
S12
S22
K
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
Factor
0.05
0.12
-2
22.2
12.82
-6
-31.9
0.025
5
0.08
-11
1.68
0.10
0.12
-5
22.2
12.81
-12
-31.7
0.026
9
0.07
-24
1.63
0.20
0.12
-10
22.1
12.80
-24
-31.4
0.027
16
0.07
-44
1.59
0.30
0.14
-16
22.1
12.68
-36
-31.1
0.028
23
0.08
-62
1.55
0.40
0.15
-25
21.9
12.45
-49
-30.6
0.030
30
0.09
-78
1.48
0.50
0.16
-32
21.7
12.12
-61
-30.0
0.032
36
0.09
-94
1.44
0.60
0.17
-45
21.3
11.65
-74
-29.3
0.034
42
0.10
-107
1.42
0.70
0.18
-57
20.9
11.04
-87
-28.5
0.038
47
0.11
-120
1.36
0.80
0.19
-71
20.3
10.35
-99
-27.7
0.041
51
0.11
-131
1.35
0.90
0.19
-84
19.6
9.57
-111
-26.9
0.045
54
0.11
-141
1.34
1.00
0.20
-98
18.9
8.78
-122
-26.0
0.050
56
0.11
-149
1.32
1.20
0.21
-122
17.2
7.28
-143
-24.3
0.061
59
0.11
-163
1.31
1.40
0.21
-143
15.5
5.97
-161
-22.8
0.072
60
0.11
-172
1.33
1.60
0.21
-162
13.8
4.92
-176
-21.5
0.084
60
0.10
-179
1.37
1.80
0.22
-177
12.2
4.08
169
-20.4
0.095
58
0.10
175
1.42
2.00
0.22
170
10.7
3.43
157
-19.5
0.106
55
0.10
172
1.49
2.20
0.21
158
9.3
2.92
145
18.5
0.119
54
0.10
166
1.55
2.40
0.20
149
8.1
2.53
134
-17.9
0.127
50
0.11
163
1.65
2.50
0.20
146
7.5
2.37
129
-17.7
0.131
49
0.12
160
1.69
Note:
3. Reference plane per Figure 9 in Applications Information section.
Thermal Resistance[2]:
θ
jc = 550°C/ W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board).


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