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INA-30311 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. INA-30311
Description  1 GHz Low Noise Silicon MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

INA-30311 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

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6-141
Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VCC
Device Voltage, to ground
V
12
Pin
CW RF Input Power
dBm
+13
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
INA-30311 Electrical Specifications[3], TC = 25°C, ZO = 50 Ω, VCC = 3 V
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Gp
Power Gain (|S21|2)
f = 900 MHz
dB
11
13
NF
Noise Figure
f = 900 MHz
dB
3.5
P1dB
Output Power at 1 dB Gain Compression
f = 900 MHz
dBm
-11
IP3
Third Order Intercept Point
f = 900 MHz
dBm
-2
VSWR
Input VSWR
f = 900 MHz
1.7
Icc
Device Current
mA
6.3
7.5
ι
d
Group Delay
f = 900 MHz
ps
325
INA-30311 Typical Scattering Parameters[3], TC = 25°C, ZO = 50 Ω, VCC = 3 V
Freq.
S11
S21
S12
S22
K
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
Factor
0.05
0.09
-1
16.12
6.40
-6
-38.1
0.012
2
0.57
-1
4.35
0.10
0.09
-2
16.11
6.39
-12
-38.2
0.012
4
0.56
-3
4.43
0.20
0.10
-6
16.12
6.40
-25
-38.4
0.012
8
0.56
-7
4.41
0.30
0.13
-16
16.14
6.41
-38
-38.9
0.011
13
0.55
-11
4.83
0.40
0.16
-29
16.07
6.36
-52
-39.4
0.011
19
0.54
-14
4.88
0.50
0.18
-42
15.90
6.24
-66
-40.1
0.010
27
0.52
-18
5.60
0.60
0.21
-59
15.56
6.00
-81
-40.7
0.009
40
0.50
-20
6.58
0.70
0.22
-75
15.04
5.65
-95
-40.7
0.009
57
0.47
-23
7.26
0.80
0.24
-92
14.34
5.21
-109
-39.6
0.011
74
0.46
-24
6.49
0.90
0.25
-107
13.44
4.70
-122
-37.6
0.013
86
0.44
-24
6.23
1.00
0.26
-122
12.53
4.23
-135
-35.5
0.017
94
0.43
-25
5.35
1.20
0.27
-144
10.50
3.35
-155
-32.3
0.024
100
0.42
-26
4.83
1.40
0.27
-162
8.50
2.66
-173
-29.6
0.033
101
0.42
-27
4.43
1.60
0.27
-177
6.69
2.16
172
-27.5
0.042
100
0.42
-28
4.31
1.80
0.27
173
5.01
1.78
159
-25.7
0.052
99
0.42
-30
4.22
2.00
0.27
163
3.58
1.51
147
-24.1
0.062
97
0.42
-32
4.17
2.20
0.27
156
2.35
1.31
136
-22.5
0.075
95
0.42
-35
3.97
2.40
0.26
150
1.21
1.15
126
-21.4
0.085
92
0.41
-37
4.04
2.50
0.26
147
0.75
1.09
122
-20.9
0.091
91
0.41
-39
3.99
Note:
3. Reference plane per Figure 9 in Applications Information section.
Thermal Resistance[2]:
θ
j-c = 550°C/ W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board).


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