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INA-12063 Datasheet(PDF) 20 Page - Agilent(Hewlett-Packard) |
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INA-12063 Datasheet(HTML) 20 Page - Agilent(Hewlett-Packard) |
20 / 24 page 6-135 To assist designers in optimizing not only the immediate circuit using the INA-12063, but to also optimize and evaluate trade-offs that affect a complete wireless system, the standard deviation ( σ) is provided for many of the Electrical Specifications param- eters (at 25 °C) in addition to the mean. The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation. Standard statistics tables or calculations provide the probabil- ity of a parameter falling between any two values, usually symmetri- cally located about the mean. Referring to Figure 30 for ex- ample, the probability of a parameter being between ± 1σ is 68.3%; between ± 2σis95.4%;and between ± 3σis99.7%. 68% 95% 99% Parameter Value Mean ( µ), typ -3 σ -2σ -1σ +1 σ +2σ +3σ Figure 30. Normal Distribution. Phase Reference Planes The positions of the reference planes used to specify S-param- eters and Noise Parameters for the INA-12063 are shown in Figure 31. As seen in the illustra- tion, the reference planes are located at the point where the package leads contact the test circuit. TEST CIRCUIT REFERENCE PLANES Figure 31. Phase Reference Planes. Test Circuits The test circuit shown in Fig- ure 32 is used for 100% testing of the guaranteed RF and DC parameters that are shown in the Table of Electrical Specifications. RF INPUT RF OUTPUT 8.2 nH 5.6 k Ω 10 nF 100 pF 8.2 nH 500 Ω 1 nF 1 nF 2.2 pF +3 V +3 V +3 V Figure 32. 900 MHz Test Circuit. The test circuits in Figures 32 and 33 were used to generate the characterization data and perfor- mance curves for 900 MHz and 250 MHz. RF INPUT RF OUTPUT 180 nH 150 Ω 5.6 pF 16 k Ω 10 nF 100 pF 39 nH 330 Ω 1 nF 1 nF 5.6 pF +3 V +3 V +3 V Figure 33. 250 MHz Test Circuit. Electrostatic Sensitivity RFICs are electro- static discharge (ESD) sensitive devices. Although the INA-12063 is robust in design, permanent damage may occur to these devices if they are sub- jected to high energy electrostatic discharges. Electrostatic charges as high as several thousand volts (which readily accumulate on the human body and on test equip- ment) can discharge without detection and may result in degradation in performance, reliability, or failure. Electronic devices may be subjected to ESD damage in any of the following areas: • Storage and handling • Inspection and testing • Assembly • In-circuit use The INA-12063 is a ESD Class 1 device. Therefore, proper ESD precautions are recommended when handling, inspecting, testing, assembling, and using these devices to avoid damage. The in-use aspect of potential ESD damage is sometimes over- looked. One such example of possible damage is in the use of an ESD sensitive device as the front-end LNA stage in personal communication equipment, such as cellular telephones, PCS, or RF modems. The input to receiver LNAs are frequently connected to external antennas that are subject to human contact and exposure to other potentially damaging levels of ESD. If this type of condition exists, some type of circuit protection may be needed. One simple method of preventing ESD damage is to add a DC return path (e.g., a shunt inductor) to the input of the receiver. This type of protection may be inte- grated into other parts of the receiver front end, such as in a T/R switch, filter, or the input matching network to the LNA. |
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