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INA-10386 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. INA-10386
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-10386 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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6-113
INA-10386 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
750 mW
RF Input Power
+13dBm
Junction Temperature
150
°C
Storage Temperature
–65 to 150
°C
Thermal Resistance:
θ
jc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 10 mW/
°C for T
C > 75°C.
INA-10386 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-10386-TR1
1000
7" Reel
INA-10386-BLK
100
Antistatic Bag
GP
Power Gain (|S21| 2)
f = 1.5 GHz
dB
23.0
26.0
∆GP
Gain Flatness
f = 0.1 to 1.5 GHz
dB
± 1.0
f3 dB
3 dB Bandwidth[2]
GHz
1.8
ISO
Reverse Isolation (|S12| 2)
f = 2.0 GHz
dB
30
Input VSWR
f = 0.1 to 2.0 GHz
1.5:1
Output VSWR
f = 0.1 to 2.0 GHz
1.5:1
NF
50
Ω Noise Figure
f = 1.5 GHz
dB
3.8
P1 dB
Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
10
IP3
Third Order Intercept Point
f = 1.5 GHz
dBm
23
tD
Group Delay
f = 1.5 GHz
psec
250
Id
Device Current
mA
35
45
55
dV/dT
Device Voltage Temperature Coefficient
mV/
°C
+10
Notes:
1. The recommended operating current range for this device is 40 to 60 mA. Typical performance as a function of current
is on the following page.
INA-10386 Electrical Specifications[1], T
A = 25°C
Symbol
Parameters and Test Conditions: V
d = 6V, ZO = 50 Ω
Units
Min.
Typ.
Max.
VSWR


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