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2SB948_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB948_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 5 page  JMnic Product Specification 2 Silicon PNP Power Transistors 2SB948 2SB948A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB948 -20 VCEO Collector-emitter voltage 2SB948A IC=-10mA IB=0 -40 V VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-0.33A -0.6 V VBEsat Base-emitter saturation voltage IC=-10A ;IB=-0.33A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-3A ; VCE=-2V 90 260 fT Transition frequency IC=-0.5A; VCE=-10V,f=10MHz 100 MHz COB Collector output capacitance f=1MHz ; VCB=-10V 400 pF Switching times ton Trun-on time 0.1 μs ts Storage time 0.5 μs tf Fall time IC=-3A IB1=-0.1A, IB2=0.1A 0.1 μs hFE-2 Classifications Q P 90-180 130-260 |
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