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INA-03184 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. INA-03184
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-03184 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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INA-03184 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
25 mA
Power Dissipation[2]
200 mW
RF Input Power
+13dBm
Junction Temperature
150
°C
Storage Temperature
–65 to 150
°C
Thermal Resistance:
θ
jc = 100°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 10 mW/
°C for T
C > 130°C.
INA-03184 Part Number Ordering Information
Part Number
No. of Devices
Container
INA-03184-TR1
1000
7" Reel
INA-03184-BLK
100
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
GP
Power Gain (|S21| 2)
f = 1.5 GHz
dB
23.0
25.0
∆GP
Gain Flatness
f = 0.1 to 2.0 GHz
dB
± 0.8
f3 dB
3 dB Bandwidth[2]
GHz
2.5
ISO
Reverse Isolation (|S12| 2)
f = 1.5 GHz
dB
35
Input VSWR
f = 0.01 to 2.0 GHz
2.0:1
Output VSWR
f = 0.01 to 2.0 GHz
3.0:1[3]
NF
50
Ω Noise Figure
f = 1.5 GHz
dB
2.6
P1 dB
Output Power at 1 dB Gain Compression
f = 1.5 GHz
dBm
–2.0
IP3
Third Order Intercept Point
f = 1.5 GHz
dBm
7
tD
Group Delay
f = 1.5 GHz
psec
210
Vd
Device Voltage
V
3.0
4.0
5.0
dV/dT
Device Voltage Temperature Coefficient
mV/
°C+4
Notes:
1. The recommended operating current range for this device is 8 to 18 mA. Typical performance as a function of current is
on the following page.
2. Referenced from 10 MHz Gain (GP).
3. VSWR can be improved by bypassing a 100–200
Ω bias resistor directly to ground. See AN-S012: MagIC Low Noise
Amplifiers.
INA-03184 Electrical Specifications[1], T
A = 25°C
Symbol
Parameters and Test Conditions: I
d = 10 mA, ZO = 50 Ω
Units
Min.
Typ.
Max.
VSWR


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