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INA-03100 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part No. INA-03100
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-03100 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard)

   
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6-104
INA-03100 Typical Performance, T
A = 25°C
(unless otherwise noted: The values are the achievable performance for the INA-03100 mounted in a 70 mil
stripline package.)
0
5
10
15
20
25
Id (mA)
04
6
210
8
Vd (V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
10
15
20
25
30
1.0
0.1
0.2
0.5
1.0
2.0
5.0
2.0
3.0
4.0
5.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 12 mA.
10
15
20
25
30
510
15
25
20
Figure 3. Power Gain vs. Current.
1.5
2.0
2.5
3.5
1.0
24
25
26
27
–2
0
2
4
–55
–25
+25
+85
+125
0.1
0.2
0.5
2.0
1.0
5.0
0.1
0.2
0.5
2.0
1.0
5.0
–8
4
0
8
–4
1.0
4.0
3.0
5.0
2.0
TEMPERATURE (
°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature, f = 1.5 GHz, Id = 12 mA.
Gp
P1 dB
NF
Gain Flat to DC
f = 0.1 – 2 GHz
f = 3 GHz
f = 4 GHz
Id = 12 to 20 mA
Id = 8 mA
Id = 8 mA
Id = 12 mA
Id = 20 mA
TMS = +125°C
TMS = +25°C
TMS = –55°C
INA-03100 Chip Dimensions
375
± 13 µm
14.8
± 0.5 mil
(4)
(3)
(1)
(2)
RF
IN
RF
OUT
GND
2
GND
1
500
± 13 µm
19.7
± 0.5 mil
Chip thickness is 140
µm/5.5 mil. Bond Pads are
41
µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
C
M
AK1987
NA03


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