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INA-02100 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. INA-02100
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-02100 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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Low Noise, Cascadable
Silicon Bipolar MMIC Amplifier
Technical Data
Features
• Cascadable 50
Ω Gain Block
• Low Noise Figure:
2.0 dB Typical at 0.5 GHz
• High Gain:
31.5 dB Typical at 0.5 GHz
25.0 dB Typical at 1.5 GHz
• 3 dB Bandwidth:
DC to 1.0 GHz
• Unconditionally Stable
(k>1)
INA-02100
Chip Outline[1]
Description
The INA-02100 is a low-noise silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) feedback
amplifier chip. It is designed for
narrow or wide bandwidth indus-
trial and military applications that
require high gain and low noise IF
or RF amplification.
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
V
d = 5.5 V
(Nominal)
RFC (Optional)
RF IN
RF OUT
4
1
2
3
Notes:
1. See Application Note, “A005:
Transistor Chip Use” for additional
information.
The INA series of MMICs is
fabricated using HP’s 10 GHz fT,
25 GHz fMAX, ISOSAT™-I silicon
bipolar process which uses nitride
self-alignment, submicrometer
lithography, trench isolation, ion
implantation, gold metallization
and polyimide intermetal dielec-
tric and scratch protection to
achieve excellent performance,
uniformity and reliability.
The recommended assembly
procedure is gold-eutectic die
attach at 400
°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1]
RF
IN
RF
OUT
GND
2
GND
1
5965-9673E


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