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INA-01100 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part No. INA-01100
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-01100 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard)

   
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6-86
INA-01100 Typical Performance, T
A = 25°C
(unless otherwise noted: The values are the achievable performance for the INA-01100 mounted in a 70 mil
stripline package.)
0
10
20
30
40
50
Id (mA)
04
6
28
Vd (V)
Figure 2. Device Current vs. Voltage.
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
15
20
25
30
35
1.0
.01
.02
.05
0.1
0.2
0.5
1.0
1.5
2.0
2.5
3.0
FREQUENCY (GHz)
Figure 1. Typical Gain and Noise Figure
vs. Frequency, TA = 25°C, Id = 35 mA
Gain Flat to DC
TMS = +125°C
TMS = +25°C
TMS = –55°C
15
20
25
30
35
.01
.05
0.2
1.0
Figure 3. Power Gain vs. Current.
0.1 GHz
1.0 GHz
0.5 GHz
0.5
2.0
1.5
2.5
1.0
30
31
32
33
7
9
11
13
–55
–25
+25
+85
+125
.02
.05
0.1
0.5
0.2
1.0
.02
.05
0.1
0.5
0.2
1.0
0
9
6
15
12
3
1.0
2.5
2.0
3.0
1.5
TEMPERATURE (
°C)
Figure 4. Output Power and 1 dB Gain
Compression, NF and Power Gain vs.
CaseTemperature. f = 0.1 GHz, Id = 35 mA.
Gp
P1 dB
NF
Id = 40 mA
Id = 35 mA
Id = 30 mA
Id = 30 to 40 mA
375
± 13 µm
14.8
± 0.5 mil
(4)
(3)
(1)
(2)
RF
IN
RF
OUT
GND
2
GND
1
500
± 13 µm
19.7
± 0.5 mil
Chip thickness is 140
µm/5.5 mil. Bond Pads are
41
µm/1.6 mil typical on each side. Note: Ground
Bonding is Critical. Refer to Application Bulletin,
“AB-0007: INA Bonding Configuration”.
INA-01100 Chip Dimensions


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