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INA-01100 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. INA-01100
Description  Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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INA-01100 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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INA-01100 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
50 mA
Power Dissipation[2,3]
400 mW
RF Input Power
+13dBm
Junction Temperature
200
°C
Storage Temperature
–65 to 200
°C
Thermal Resistance:
θ
jc = 60°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 16.7 mW/
°C for T
MS >
176
°C.
INA-01100 Typical Scattering Parameters[1] (Z
O = 50 Ω, TA = 25°C, VCC = 35 mA)
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
k
0.01
0.09
–16
32.7
43.4
–1
–38.5
.012
–1
.18
1
1.17
0.05
0.10
–27
32.7
43.1
–10
–38.6
.012
15
.19
5
1.18
0.10
0.11
–5
32.4
41.9
–20
–38.4
.012
–8
.20
10
1.17
0.20
0.14
–80
31.6
38.0
–37
–38.6
.012
4
.24
14
1.22
0.30
0.18
–98
30.5
33.7
–52
–38.8
.011
–10
.27
15
1.31
0.40
0.20
–110
29.4
29.6
–65
–39.6
.011
2
.30
10
1.51
0.50
0.22
–115
28.4
26.2
–75
–38.6
.012
–12
.32
6
1.48
0.60
0.24
–120
27.4
23.4
–84
–39.1
.011
–7
.34
1
1.67
0.80
0.27
–124
25.7
19.3
–100
–38.3
.012
–6
.36
–11
1.76
1.00
0.30
–127
24.3
16.3
–115
–36.1
.016
–5
.36
–22
1.58
1.5
0.44
165
21.8
12.37 –179
–33.6
.020
42
.19
–69
1.75
2.0
0.44
154
17.9
7.88
146
–33.0
.022
42
.13
–106
2.42
2.5
0.46
148
14.6
5.36
121
–30.6
.029
36
.12
–151
2.63
3.0
0.48
139
11.4
3.71
96
–30.0
.032
45
.10
159
3.31
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
S11
S21
S12
S22
GP
Power Gain (|S21| 2)
f = 100 MHz
dB
32.5
∆GP
Gain Flatness
f = 10 to 250 MHz
dB
± 0.5
f3 dB
3 dB Bandwidth
MHz
500
ISO
Reverse Isolation (|S12| 2)
f = 10 to 250 MHz
dB
39
Input VSWR
f = 10 to 250 MHz
1.6:1
Output VSWR
f = 10 to 250 MHz
1.5:1
NF
50
Ω Noise Figure
f = 100 MHz
dB
1.7
P1 dB
Output Power at 1 dB Gain Compression
f = 100 MHz
dBm
11
IP3
Third Order Intercept Point
f = 100 MHz
dBm
23
tD
Group Delay
f = 100 MHz
psec
200
Vd
Device Voltage
V
4.0
5.5
7.0
dV/dT
Device Voltage Temperature Coefficient
mV/
°C
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-01100 mounted in a 70 mil stripline package.
INA-01100 Electrical Specifications[1,3], T
A = 25°C
Symbol
Parameters and Test Conditions[2]: I
d = 35 mA, ZO = 50 Ω
Units
Min.
Typ.
Max.
VSWR


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