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ATF-45171 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-45171
Description  2-8 GHz Medium Power Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-45171 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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5-95
2 – 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45171
70 mil Flange Package
Features
• High Output Power:
29.0 dBm Typical P 1dB at 4 GHz
• High Gain at 1dB
Compression:
10.5 dB Typical G1 dB at 4 GHz
• High Power Efficiency:
38% Typical at 4 GHz
• Hermetic Metal-Ceramic
Stripline Package
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Electrical Specifications, TA = 25°C
P1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
28.0
29.0
VDS = 9 V, IDS = 250 mA
f = 8.0 GHz
28.0
G1 dB
1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA
f = 4.0 GHz
dB
9.5
10.5
f = 8.0 GHz
4.5
η
add
Efficiency @ P1 dB: VDS = 9 V, IDS = 250 mA
f = 4.0 GHz
%
38
gm
Transconductance: VDS = 2.5 V, IDS = 250 mA
mmho
200
IDSS
Saturated Drain Current: VDS = 1.75 V, VGS = 0 V
mA
400
600
800
VP
Pinch-off Voltage: VDS = 2.5 V, IDS =12.5 mA
V
-5.4
-4.0
-2.0
Description
The ATF-45171 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica-
tion in the 2 to 8 GHz frequency
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applica-
tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
5965-8734E


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