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ATF-45101 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ATF-45101
Description  2-8 GHz Medium Power Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-45101 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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ATF-45101 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+14
VGS
Gate-Source Voltage
V
-7
VGD
Gate-Drain Voltage
V
-16
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
W
3.6
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65to+175
Thermal Resistance:
θ
jc = 42°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
µmSpotSize[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 24 mW/
°C for
TCASE > 24°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-45101 Typical Performance, T
A = 25°C
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 250 mA.
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 250 mA.
FREQUENCY (GHz)
20
15
10
5
0
30
29
28
27
26
2.0
6.0
4.0
8.0 10.0 12.0
P1 dB
G1 dB
|S21|2
MSG
MAG
1.0
2.0
4.0
6.0
14.0
10.0
25
20
15
10
5
0
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.
PIN (dBm)
0
5
10
15
20
25
30
35
30
25
20
15
10
5
0
40
30
20
10
0


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