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ATF-26884 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-26884
Description  2-16 GHz General Purpose Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-26884 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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5-71
2 – 16 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-26884
84 Plastic Package
Description
The ATF-26884 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Electrical Specifications, TA = 25°C
GSS
Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA
f = 12.0 GHz
dB
7.0
9.0
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 10 mA
f = 12.0 GHz
dB
2.2
GA
Gain @ NFO: VDS = 3 V, IDS = 10 mA
f = 12.0 GHz
dB
6.0
P1 dB
Power Output @ 1 dB Gain Compression:
f = 12.0 GHz dBm
15.0
18.0
VDS = 5 V, IDS = 30 mA
gm
Transconductance: VDS = 3 V, VGS = 0 V
mmho
15
35
IDSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V
mA
30
50
90
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
V
-3.5
-1.5
-0.5
Note:
1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
Features
• High Output Power:
18.0 dBm Typical P 1dB at 12 GHz
• High Gain:
9.0 dB Typical GSS at 12 GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
housed in a cost effective
microstrip package. This device is
designed for use in oscillator
applications and general purpose
amplifier applications in the
2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8703E


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