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ATF-25735 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-25735
Description  0.5-10 GHz General Purpose Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
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ATF-25735 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
35 micro-X Package
Description
The ATF-25735 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
Features
• High Output Power:
19.0 Bm Typical P 1dB at 4 GHz
• High Gain:
12.5 dB Typical G 1 dB at 4 GHz
• Low Noise Figure:
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f = 2. 0 GHz
dB
1.0
f = 4.0 GHz
1.2
1.5
f = 6.0 GHz
1.4
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
f = 2.0 GHz
dB
15.0
f = 4.0 GHz
11.5
13.0
f =.6.0 GHz
10.5
P1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
19.0
VDS =5 V, IDS = 50 mA
G1 dB
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA
f = 4.0 GHz
dB
12.5
gm
Transconductance: VDS =3 V, VGS = 0 V
mmho
50
80
IDSS
Saturated Drain Current: VDS =3 V, VGS = 0 V
mA
50
100
150
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
V
-3.0
-2.0
-0.8
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8710E


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