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ATF-25170 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ATF-25170
Description  0.5-10 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-25170 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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5-58
ATF-25170 Typical Performance, T
A = 25°C
ATF-25170 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+7
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-8
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
450
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65to+175
Thermal Resistance :
θ
jc = 300°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
µmSpotSize[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 3.3 mW/
°C for
TMOUNTING SURFACE >40°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-25170 Noise Parameters: V
DS = 3 V, IDS = 20 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
1.0
0.6
.89
24
.78
2.0
0.7
.77
50
.53
4.0
0.8
.63
105
.33
6.0
1.0
.66
147
.06
8.0
1.2
.62
-159
.11
FREQUENCY (GHz)
IDS (mA)
Figure 3. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
Figure 2. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA.
020
10
40
50
30
60
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
FREQUENCY (GHz)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
16
14
12
10
2.0
6.0
4.0
10.0
8.0
12.0
1.5
1.0
0.5
0
GA
GA
NFO
NFO
|S21|2
MSG
MAG
0.5
1.0
2.0
4.0
6.0
8.0
12.0
25
20
15
10
5
0


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