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ATF-25170 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-25170
Description  0.5-10 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-25170 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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5-57
0.5 – 10 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-25170
70 mil Package
Description
The ATF-25170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Features
• Low Noise Figure:
0.8 dB Typical at 4 GHz
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P 1dB at 4 GHz
• Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f = 4.0 GHz
dB
0.8
1.0
f = 6 0 GHz
dB
1.0
f = 8.0 GHz
dB
1.2
GA
Gain @ NFO: VDS =3 V, IDS = 20 mA
f = 4.0 GHz
dB
13.0
14.0
f = 6.0 GHz
dB
11.5
f = 8.0 GHz
dB
9.0
P1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
21.0
VDS =5 V, IDS =50 mA
G1 dB
1 dB Compressed Gain: VDS =5 V, IDS =50 mA
f = 4.0 GHz
dB
15.0
gm
Transconductance: VDS = 3 V, VGS = 0 V
mmho
50
80
IDSS
Saturated Drain Current: VDS =3 V, VGS = 0 V
mA
50
100
150
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
V
-3.0
-2.0
-0.8
housed in a hermetic, high reliabil-
ity package. Its noise figure makes
this device appropriate for use in
low noise amplifiers operating in
the 0.5-10 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8712E


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