Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

ATF-21186 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-21186
Description  0.5-6 GHz General Purpose Gallium Arsenide FET
Download  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo 

ATF-21186 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
Zoom Inzoom in Zoom Outzoom out
 1 / 8 page
background image
5-49
Description
Hewlett–Packard’s ATF-21186 is a
low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface
mount plastic package. This
general purpose device is
designed for use in low noise
amplifiers, gain stages, driver
amplifiers, and oscillators
operating over the VHF, UHF, and
microwave frequency ranges.
High gain with two volt operation
makes this part attractive for low
voltage, battery operated systems.
The low noise figure is
appropriate for commercial
systems demanding good
sensitivity, such as GPS receiver
front-ends and MMDS television
receivers. The output power is
sufficient for use as the driver
stage in many hand-held
transceivers operating in the
900 MHz through 2.4 GHz bands,
including in cellular phones, PCN,
and ISM band spread spectrum
applications.
0.5 – 6 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-21186
Features
• Low Noise Figure:
0.5 dB Typ. @ 2 GHz
• High Output Power:
19 dBm Typ. P
1dB @ 2 GHz
• High MSG:
13.5 dB Typ. @ 2 GHz
• Low Cost Surface Mount
Plastic Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
ATF-21186 Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 15 mA.
85 mil Plastic Surface
Mount Package
Pin Configuration
0
0.1
FREQUENCY (GHz)
30
10
1
10
20
MSG
S
MAG
21
1
4
3
2
SOURCE
SOURCE
DRAIN
GATE
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 750 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
5965-8716E


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
ATF-255700.5-10 GHz General Purpose Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-257350.5-10 GHz General Purpose Gallium Arsenide FET 1 2 3 4 Agilent(Hewlett-Packard)
ATF-268362-16 GHz General Purpose Gallium Arsenide FET 1 2 3 4 Agilent(Hewlett-Packard)
ATF-268842-16 GHz General Purpose Gallium Arsenide FET 1 2 3 4 Agilent(Hewlett-Packard)
ATF-211700.5-6 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-131002-18 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-133362-16 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn