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ATF-21186 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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ATF-21186 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
1 / 8 page 5-49 Description Hewlett–Packard’s ATF-21186 is a low cost Gallium Arsenide Schottky barrier-gate field effect transistor housed in a surface mount plastic package. This general purpose device is designed for use in low noise amplifiers, gain stages, driver amplifiers, and oscillators operating over the VHF, UHF, and microwave frequency ranges. High gain with two volt operation makes this part attractive for low voltage, battery operated systems. The low noise figure is appropriate for commercial systems demanding good sensitivity, such as GPS receiver front-ends and MMDS television receivers. The output power is sufficient for use as the driver stage in many hand-held transceivers operating in the 900 MHz through 2.4 GHz bands, including in cellular phones, PCN, and ISM band spread spectrum applications. 0.5 – 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features • Low Noise Figure: 0.5 dB Typ. @ 2 GHz • High Output Power: 19 dBm Typ. P 1dB @ 2 GHz • High MSG: 13.5 dB Typ. @ 2 GHz • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to “Tape-and-Reel Packaging for Surface Mount Semiconductors”. ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 15 mA. 85 mil Plastic Surface Mount Package Pin Configuration 0 0.1 FREQUENCY (GHz) 30 10 1 10 20 MSG S MAG 21 1 4 3 2 SOURCE SOURCE DRAIN GATE This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 5965-8716E |
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