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ATF-21170 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ATF-21170
Description  0.5-6 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-21170 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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5-47
ATF-21170 Typical Performance, T
A = 25°C
ATF-21170 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+7
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-8
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
600
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65to+175
Thermal Resistance :
θ
jc = 250°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
µmSpotSize[4]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4 mW/
°C for
TCASE > 25°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-21170 Noise Parameters: V
DS = 3 V, IDS = 20 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
0.5
0.4
.93
17
.90
1.0
0.5
.85
35
.70
2.0
0.6
.70
70
.46
4.0
0.9
.59
148
.14
8.0
1.2
.54
-177
.09
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 3V, IDS = 20 mA, TA = 25°C.
2.0
1.5
1.0
0.5
0
18
15
12
9
6
1.0
4.0
2.0
6.0
8.0
GA
NFO
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 3V, f = 4.0 GHz.
020
10
40
50
30
60
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
FREQUENCY (GHz)
16
14
12
10
1.5
1.0
0.5
0
GA
NFO
|S21|2
MSG
MAG
0.5
1.0
2.0
4.0 6.0 8.0 10.0
25
20
15
10
5
0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 80 mA.
FREQUENCY (GHz)
|S21|2
MSG
MAG
30
25
20
15
10
5
0
0.5
1.0
2.0
4.0 6.0 8.0 10.0


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