Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

ATF-21170 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-21170
Description  0.5-6 GHz Low Noise Gallium Arsenide FET
Download  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo 

ATF-21170 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
5-46
0.5– 6 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-21170
70 mil Package
Description
The ATF-21170 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
Features
• Low Noise Figure:
0.9 dB Typical at 4 GHz
• High Associated Gain:
13.0 dB Typical at 4 GHz
• High Output Power:
23.0 dBm Typical P 1dB at 4 GHz
• Hermetic Gold-Ceramic
Microstrip Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
f = 2.0 GHz
dB
0.6
f = 4.0 GHz
dB
0.9
1.1
f = 6.0 GHz
dB
1.2
GA
Gain @ NFO: VDS = 3 V, IDS = 20 mA
f = 2.0 GHz
dB
16.0
f = 4.0 GHz
dB
12.0
13.0
f = 6.0 GHz
dB
10.0
P1 dB
Power Output @ 1 dB Gain Compression:
f = 4.0 GHz
dBm
23.0
VDS =5 V, IDS = 80 mA
G1 dB
1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA
f = 4.0 GHz
dB
13.0
gm
Transconductance: VDS =3 V, VGS = 0 V
mmho
70
120
IDSS
Saturated Drain Current: VDS = 3 V, VGS = 0 V
mA
80
120
200
VP
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA
V
-3.0
-1.5
-0.8
housed in a hermetic, high
reliability package. This device is
designed for use in low noise or
medium power amplifier applica-
tions in the 0.5-6 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
750 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8718E


Html Pages

1  2  3 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
ATF-131002-18 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-133362-16 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-132841-16 GHz Low Noise Gallium Arsenide FET 1 2 Agilent(Hewlett-Packard)
ATF-137362-16 GHz Low Noise Gallium Arsenide FET 1 2 3 4 Agilent(Hewlett-Packard)
ATF-251700.5-10 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-101000.5-12 GHz Low Noise Gallium Arsenide FET 1 2 3 4 Agilent(Hewlett-Packard)
ATF-101360.5-12 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-102360.5-12 GHz Low Noise Gallium Arsenide FET 1 2 3 Agilent(Hewlett-Packard)
ATF-211860.5-6 GHz General Purpose Gallium Arsenide FET 1 2 3 4 5 MoreAgilent(Hewlett-Packard)

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn