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ATF-13336-TR1 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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ATF-13336-TR1 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
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2 / 3 page  5-37 ATF-13336 Typical Performance, T A = 25°C ATF-13336 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VDS Drain-Source Voltage V +5 VGS Gate-Source Voltage V -4 VGD Gate-Drain Voltage V -6 IDS Drain Current mA IDSS PT Power Dissipation [2,3] mW 225 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65to+175 Thermal Resistance : θ jc = 400°C/W; TCH = 150°C Liquid Crystal Measurement: 1 µmSpotSize[5] Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25°C. 3. Derate at 2.5mW/ °C for TCASE> 85°C. 4. Storage above +150 °C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175 °C. 4. The small spot size of this tech- nique results in a higher, though more accurate determination of θ jc than do alternate methods. See MEASUREMENTS section for more information. Part Number Ordering Information Part Number Devices Per Reel Reel Size ATF-13336-TR1 1000 7" ATF-13336-STR 10 strip FREQUENCY (GHz) Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2.5 V, IDS = 20 mA. FREQUENCY (GHz) 2.0 1.5 1.0 0.5 0 16 14 12 10 8 6 6.0 10.0 8.0 12.0 14.0 16.0 GA NFO |S21|2 MSG MAG 2.0 4.0 6.0 8.0 10.0 12.0 16.0 25 20 15 10 5 0 Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C. IDS (mA) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2.5V, f = 12.0 GHz. 020 10 40 50 30 60 14 12 10 8 2.5 2.0 1.5 1.0 GA NFO ATF-13336 Noise Parameters: V DS = 2.5 V, IDS = 20 mA Freq. NFO Γ opt GHz dB Mag Ang RN/50 4.0 0.8 .63 93 .27 6.0 1.1 .47 138 .10 8.0 1.2 .40 -153 .20 12.0 1.4 .52 -45 .88 14.0 1.6 .57 -2 1.3 |
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