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ATF-13100 Datasheet(PDF) 3 Page - Agilent(Hewlett-Packard)

Part No. ATF-13100
Description  2-18 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-13100 Datasheet(HTML) 3 Page - Agilent(Hewlett-Packard)

   
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Typical Scattering Parameters, Common Emitter, Z
O = 50 Ω, TA =25°C, VDS = 2.5 V, IDS = 20 mA
Freq.
S11
S21
S12
S22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
2.0
.96
-27
13.4
4.68
153
-26.9
.045
75
.55
-16
3.0
.92
-41
13.4
4.65
140
-23.6
.066
67
.52
-24
4.0
.85
-58
13.1
4.54
126
-21.4
.085
59
.49
-33
5.0
.79
-76
12.9
4.40
113
-19.8
.102
50
.44
-41
6.0
.73
-95
12.4
4.19
100
-18.7
.116
42
.38
-48
7.0
.68
-113
12.0
3.97
87
-18.0
.126
34
.30
-54
8.0
.63
-132
11.4
3.71
75
-17.5
.134
25
.24
-64
9.0
.62
-151
10.9
3.51
63
-17.1
.140
18
.18
-75
10.0
.59
-167
10.3
3.27
53
-16.8
.144
11
.13
-84
11.0
.59
173
9.7
3.07
40
-16.5
.149
2
.08
-104
12.0
.57
155
9.0
2.83
30
-16.5
.150
-9
.02
160
13.0
.60
136
8.6
2.69
19
-16.4
.151
-16
.08
106
14.0
.64
116
7.9
2.47
7
-16.4
.151
-25
.15
103
15.0
.67
98
7.1
2.26
-6
-16.4
.152
-34
.23
100
16.0
.73
83
5.8
1.96
-16
-16.9
.143
-40
.31
90
17.0
.77
72
4.6
1.70
-26
-17.0
.141
-45
.36
82
18.0
.80
63
3.5
1.50
-35
-17.4
.135
-48
.40
72
A model for this device is available in the DEVICE MODELS section.
ATF-13100 Chip Dimensions
Note: Die thickness is 4.5 mil, and backside metallization is
200 Å Ti and 2000 Å Au.
D
G
SS
356
µm
14 mil
50
µm
1.97 mil
118
µm
4.65 mil
254
µm
10 mil
50
µm
1.97 mil
92
µm
3.62 mil
44
µm
1.73 mil


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