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ATF-13100 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ATF-13100
Description  2-18 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-13100 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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5-34
ATF-13100 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-6
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
225
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65to+175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMOUNTING SURFACE = 25°C.
3. Derate at 4 mW/
°C for
TMOUNTING SURFACE > 119°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-13100 Typical Performance, T
A = 25°C
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-13100-GP3
50
Thermal Resistance :
θ
jc = 250°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
µm Spot Size[4]
ATF-13100 Noise Parameters: V
DS = 2.5 V, IDS = 20 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
4.0
0.4
0.60
30
0.32
6.0
0.7
0.32
68
0.21
8.0
0.8
0.25
102
0.15
12.0
1.1
0.23
-165
0.09
16.0
1.5
0.32
-112
0.21
FREQUENCY (GHz)
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
010
520
30
25
15
35
2.0
1.5
1.0
0.5
0
20
15
10
5
0
12
10
8
6
2.0
6.0
4.0
8.0 10.0 12.0 16.0
4.0
3.0
2.0
1.0
GA
GA
NFO
NFO
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.


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