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ATF-13100 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-13100
Description  2-18 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-13100 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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5-33
2–18 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
1.1 dB Typical at 12 GHz
• High Associated Gain:
9.5 dB Typical at 12 GHz
• High Output Power:
17.5 dBm Typical P1 dB at 12 GHz
ATF-13100
Chip Outline
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
dB
0.8
f = 12.0 GHz
dB
1.1
1.2
f = 15.0 GHz
dB
1.5
GA
Gain @ NFO; VDS = 2.5 V, IDS = 20 mA
f = 8.0 GHz
dB
12.0
f = 12.0 GHz
dB
9.0
9.5
f = 15.0 GHz
dB
8.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 12.0 GHz dBm
17.5
VDS = 4 V, IDS = 40 mA
G1 dB
1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA
f = 12.0 GHz
dB
8.5
gm
Transconductance: VDS = 2.5 V, VGS = 0 V
mmho
30
55
IDSS
Saturated Drain Current; VDS = 2.5 V, VGS = 0 V
mA
40
50
90
VP
Pinchoff Voltage: VDS = 2.5 V, IDS = 1 mA
V
-3.0
-1.5
-0.8
Note:
1. RF performance is determined by assembling and testing 10 samples per wafer.
Description
The ATF-13100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
chip. This device is designed for
use in low noise, wideband
amplifier and oscillator applica-
tions in the 2-18 GHz frequency
range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
The recommended mounting
procedure is to die attach at a
stage temperature of 300
°C using
a gold-tin preform under forming
gas. Assembly can be preformed
with either wedge or ball bonding
using 0.7 mil gold wire. See also
“Chip Use” in the APPLICATIONS
section.
D
G
SS
5965-8694E


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