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ATF-10100 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ATF-10100
Description  0.5-12 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-10100 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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ATF-10100 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
VDS
Drain-Source Voltage
V
+5
VGS
Gate-Source Voltage
V
-4
VGD
Gate-Drain Voltage
V
-7
IDS
Drain Current
mA
IDSS
PT
Power Dissipation [2,3]
mW
430
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature[4]
°C
-65to+175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 4.4 mW/
°C for
TCASE > 78°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of
θ
jc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
ATF-10100 Typical Performance, T
A = 25°C
Part Number Ordering Information
Part Number
Devices Per Tray
ATF-10100-GP3
50
Thermal Resistance :
θ
jc = 225°C/W; TCH = 150°C
Liquid Crystal Measurement:
1
µm Spot Size[4]
ATF-10100 Noise Parameters: V
DS = 2 V, IDS = 25 mA
Freq.
NFO
Γ
opt
GHz
dB
Mag
Ang
RN/50
1.0
0.4
0.78
13
0.40
2.0
0.4
0.55
27
0.29
4.0
0.55
0.39
65
0.22
6.0
0.8
0.41
105
0.16
8.0
1.0
0.46
144
0.10
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
010
20
30
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
FREQUENCY (GHz)
16
14
12
10
1.5
1.0
0.5
0
GA
NFO
|S21|2
MSG
MAG
1.0
2.0
4.0
6.0 8.0 10.0 12.0
30
20
10
0
Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
FREQUENCY (GHz)
|S21|2
MSG
MAG
1.0
2.0
4.0
6.0 8.0 10.0 12.0
30
20
10
0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
2.0
1.5
1.0
0.5
0
18
15
12
9
6
2.0
6.0
4.0
8.0 10.0 12.0
GA
NFO


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