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ATF-10100 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. ATF-10100
Description  0.5-12 GHz Low Noise Gallium Arsenide FET
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ATF-10100 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

   
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5-19
0.5 – 12 GHz Low Noise
Gallium Arsenide FET
Technical Data
Features
• Low Noise Figure:
0.5 dB Typical at 4 GHz
• Low Bias:
VDS=2V,IDS = 25mA
• High Associated Gain:
14.0 dB Typical at 4 GHz
• High Output Power:
21.0 dBm Typical P1 dB at 4 GHz
ATF-10100
Chip Outline
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ.
Max.
NFO
Optimum Noise Figure: VCE = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
0.4
f = 4.0 GHz
dB
0.55
0.7
f = 6.0 GHz
dB
0.8
GA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
f = 2.0 GHz
dB
17.0
f = 4.0 GHz
dB
12.0
14.0
f = 6.0 GHz
dB
12.0
P1 dB
Power Output @ 1 dB Gain Compression
f = 4.0 GHz
dBm
21.0
VDS = 4 V, IDS = 70 mA
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
15.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
mmho
80
140
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
mA
70
130
180
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
V
-3.0
-1.3
-0.8
Note:
1. RF performance is determined by packaging and testing 10 devices per wafer.
Description
The ATF-10100 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
D
SS
G
G
chip. Its premium noise figure
makes this device appropriate for
use in the first stage of low noise
amplifiers operating in the
0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
interconnects between drain
fingers. Total gate periphery is
500 microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5965-8702E


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