4-145

Absolute

Symbol

Parameter

Units

V

EBO

Emitter-Base Voltage

V

1.5

V

CBO

Collector-Base Voltage

V

20

V

CEO

Collector-Emitter Voltage

V

12

I

C

Collector Current

mA

60

P

T

mW

500

T

j

Junction Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

3. See MEASUREMENTS section, “Thermal Resistance,” for more information.

Symbol

Parameters and Test Conditions

Unit

Min.

Typ.

Max.

NF

o

Optimum Noise Figure: I

f = 1.0 GHz

dB

1.4

f = 2.0 GHz

1.7

f = 4.0 GHz

3.0

G

A

Gain @ NF

f = 1.0 GHz

dB

17.0

f = 2.0 GHz

12.5

f = 4.0 GHz

8.0

|S

2

Insertion Power Gain: I

f = 1.0 GHz

dB

17.0

f = 2.0 GHz

11.0

f = 2.0 GHz

dBm

18.0

G

1dB

1 dB Compressed Gain: I

f = 2.0 GHz

dB

13.0

f

T

Gain Bandwidth Product: I

GHz

8.0

30

150

270

I

CBO

Collector Cutoff Current: V

µA

0.2

I

EBO

Emitter Cutoff Current: V

µA

1.0

θ

Note:

1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”

10

20

I (mA)

C

10

16

12

14

030

2

4

0

O

NF

30

12

0

20

8

16

10

20

COLLECTOR CURRENT

40

4

18

14

10

6

2

30

10

0

20

5

15

510

I (mA)

C

025

40

4.0 GHz

2.0 GHz

1.0 GHz

Figure 2. AT-41586 Optimum Noise

Figure and Associated Gain vs. Collec-

f = 2.0 GHz.

Figure 4. AT-41586 Insertion Power

Gain vs. Collector Current and

Frequency at 25