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AT-41511 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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AT-41511 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
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4-135 Characterization Information, TA = 25°C AT-41511 AT-41533 Symbol Parameters and Test Conditions Units Min Typ Min Typ NF Noise Figure f = 0.9 GHz dB 1.0 1.0 VCE = 5 V, IC = 5 mA f = 2.4 GHz 1.7 1.6 GA Associated Gain f = 0.9 GHz dB 15.5 14.5 VCE = 5 V, IC = 5 mA f = 2.4 GHz 11 9 P1dB Power at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dBm 14.5 14.5 VCE = 5 V, IC = 25 mA G1dB Gain at 1 dB Gain Compression (opt tuning) f = 0.9 GHz dB 17.5 14.5 VCE = 5 V, IC = 25 mA IP3 Output Third Order Intercept Point, f = 0.9 GHz dBm 25 25 VCE = 5 V, IC =25 mA (opt tuning) |S21E|2 Gain in 50 Ω system; V CE = 5 V, IC = 5 mA f = 0.9 GHz dB 13.5 15.5 10.8 12.8 f = 2.4 GHz 7.9 5.2 AT-41511, AT-41533 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum[1] VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 50 PT Power Dissipation[2,3] mW 225 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Electrical Specifications, TA = 25°C AT-41511 AT-41533 Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max hFE Forward Current Transfer Ratio VCE = 5 V - 30 150 270 30 150 270 IC = 5 mA ICBO Collector Cutoff Current VCB = 3 V µA 0.2 0.2 IEBO Emitter Cutoff Current VEB = 1 V µA 1.0 1.0 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. TMounting Surface = 25°C. 3. Derate at 1.82 mW/ °C for T C > 26°C. Thermal Resistance:[2] θ jc =550°C/W Ordering Information Part Number Increment Comments AT-41511-BLK 100 Bulk AT-41511-TR1 3000 7" Reel AT-41533-BLK 100 Bulk AT-41533-TR1 3000 7" Reel |
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