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AT-41400 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard)

Part No. AT-41400
Description  Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com

AT-41400 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard)

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Up to 6 GHz Low Noise Silicon
Bipolar Transistor Chip
Technical Data
• Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.5 dB Typical at 2.0 GHz
10.5 dB Typical at 4.0 GHz
• High Gain-Bandwidth
9.0 GHz Typical fT
Chip Outline
Hewlett-Packard’s AT-41400 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigitated
geometry yields an intermediate
sized transistor with impedances
that are easy to match for low
noise and moderate power appli-
cations. This device is designed for
use in low noise, wideband
amplifier, mixer and oscillator
applications in the VHF, UHF, and
microwave frequencies. An
optimum noise match near 50
Ω at
1 GHz , makes this device easy to
use as a low noise amplifier.
The AT-41400 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

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