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AT-31011 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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AT-31011 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
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1 / 10 page  4-33 Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data Description Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a mul- tiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances. Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF,13 dB GA AT-31033:0.9 dB NF,11 dB GA • Characterized for End-Of- Life Battery Use (2.7 V) • SOT-143 SMT Plastic Package • Tape-And-Reel Packaging Option Available[1] battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific- Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications. The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices. AT-31011 AT-31033 BASE EMITTER EMITTER COLLECTOR BASE EMITTER COLLECTOR 310 310 SOT-23 (AT-31033) SOT-143 (AT-31011) Outline Drawing Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices” 5965-8919E |
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