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2SA634 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part No. 2SA634
Description  Silicon PNP Transistors
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2SA634 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd.

  2SA634 Datasheet HTML 1Page - Quanzhou Jinmei Electronic Co.,Ltd.  
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Power Transistors
www.jmnic.com
2SA634
Silicon PNP Transistors
B C E
Features
﹒With TO-220 package
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
VCBO
Collector to base voltage
40
V
VCEO
Collector to emitter voltage
40
V
VEBO
Emitter to base voltage
5.0
V
IB
Base collector current
A
IC
Collector current
3.0
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~+150
TO-220
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
ICBO
Collector-base cut-off current
VCB=40V; IE=0
200
uA
IEBO
Emitter-base cut-off current
VEB=5.0V; IC=0
200
uA
ICEO
Collector-emitter cut-off current
VCE=40V; IB=0
0.5
mA
VCBO
Collector-base breakdown voltage
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1mA; IB=0
40
V
VEBO
Emitter-base breakdown voltage
IE=1mA; Ic=0
5
VCE(sat-1)
Collector-emitter saturation voltages
IC=3A; IB=0.3A
1.0
V
VCE(sat-2)
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
IC=1A; VCE=5V
40
hFE-2
Forward current transfer ratio
hFE-3
Forward current transfer ratio
VBE(sat)1
Base-emitter stauration voltages
IC=3A; IB=0.3A
1.5
V
VBE(sat)1
Base-emitter stauration voltages
fT
Transition frepuency
Cob
Output Capacitance


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