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DIM500GDM33-TS000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DIM500GDM33-TS000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 8 page DIM500GDM33-TS000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/8 www.dynexsemi.com ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol Parameter Test Conditions Min Typ Max Units ICES Collector cut-off current VGE = 0V, VCE = VCES 2 mA VGE = 0V, VCE = VCES, Tcase = 125°C 30 mA VGE = 0V, VCE = VCES, Tcase = 150°C 50 mA IGES Gate leakage current VGE = ± 20V, VCE = 0V 1 μA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 5.7 V VCE(sat) † Collector-emitter saturation voltage VGE = 15V, IC = 500A 2.2 V VGE = 15V, IC = 500A, Tj = 125°C 2.8 V VGE = 15V, IC = 500A, Tj = 150°C 3.0 V IF Diode forward current DC 500 A IFM Diode maximum forward current tp = 1ms 1000 A VF † Diode forward voltage IF = 500A 2.4 V IF = 500A, Tj = 125°C 2.5 V IF = 500A, Tj = 150°C 2.4 V Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MHz 90 nF Qg Gate charge ±15V 10 μC Cres Reverse transfer capacitance VCE = 25V, VGE = 0V, f = 1MHz 2 nF LM Module inductance 25 nH RINT Internal transistor resistance 260 μ SCData Short circuit current, ISC Tj = 150°C, VCC = 2500V tp ≤ 10μs, VGE ≤ 15V VCE (max) = VCES – L * x dI/dt IEC 60747-9 1850 A Note: † Measured at the power busbars, not the auxiliary terminals * L is the circuit inductance + LM |
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