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PF0210 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part No. PF0210
Description  MOS FET Power Amplifier Module for ADC Mobile Phone
Download  12 Pages
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

PF0210 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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PF0210
3
Electrical Characteristics (Tc = 25°C)
Analog Transmission
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency
f
824
849
MHz
Drain cutoff current
I
DS
500
µAV
DD = 17 V, VAPC = 0 V
Total efficiency(1)
η
T(1)
30
34
%
Pin = 3 dBm, V
DD = 12.5 V,
2nd harmonic distortion
2nd H.D.
–55
–30
dBc
Pout = 6 W (V
APC controlled),
3rd harmonic distortion
3rd H.D.
–60
–40
dBc
Input VSWR
VSWR (in) —
2
3
Output power
Pout
6
9
W
Pin = 3 dBm, V
DD = 12.5 V,
V
APC = 4 V
Isolation
–45
–40
dBm
Pin = 3dBm, V
DD = 12.5 V,
V
APC = 0.5 V
Stability
No parasitic oscillation
Pin = 3 dBm, V
DD = 12.5 V,
Pout
≤ 6 W,
Output VSWR = 20:1 All phases
Digital Transmission
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency
f
824
849
MHz
Total efficiency(2)
η
T(2)
25
30
%
Pin controlled (
π/4-DQPSK, √α =
Adjacent channel
P
ADJ (30k)
–30
–28
dBc
0.35, 48.6 kbps),
leakage power
P
ADJ (60k)
–50
–46
dBc
BW =24.3 kHz with Root Nyquist
Input power
Pin
5
dBm ave. Filter,
Pout = 5.5 W ave., V
DD = 12.5 V
V
APC = 3.9 V
Mechanical Characteristics
Item
Conditions
Spec
Torque for screw up the heatsink flange
M3 Screw Bolts
4 to 6 kg•cm
Warp size of the heatsink flange: S
S
S = 0
+0.3/– 0 mm


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