Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

*1 Turn-on and Turn-off test circuit

Page

Note)

1.



Electrical Characteristics Ta = 25

C  3C

Parameter

Symbol

Drain-source cutoff current

Drain-source breakdown voltage

VDSS

IDSS

Unit

Conditions

Min

Typ Max

Product Standards

MOS FET

FK3906010L

2of 5

A

VGS =

10 V, VDS = 0

ID = 1.0

A, VDS = 3.0 V

ID = 10 mA, VGS = 2.5 V

1.0

2.

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

*1

V

ID = 1 mA, VGS = 0

60

VDS = 60 V, VGS = 0

toff

Gate-source cutoff current

Gate threshold voltage

Drain-source ON resistance

Forward transfer admittance

Turn-off time

*1

IGSS

VTH

RDS(on)

|Yfs|

VDS = 3 V, VGS = 0, f = 1 MHz

VDD = 3 V, VGS = 0 to 3 V,

Coss

Crss

ton

Ciss

ID = 10 mA

0.9

20

ID = 10 mA, VGS = 4.0 V

ID = 10 mA, VDS = 3.0 V

1.2

8

6

60

12

7

10

1.5

15

12

3

100

100

ID = 10 mA

VDD = 3 V, VGS = 3 to 0 V,

A

V





ns

ns

mS

pF

pF

pF

50Ω

VDD=3V

Vin

VGS=0～3V

ID=10mA

RL=300Ω

Vout

D

S

G

50Ω

VDD=3V

Vin

VGS=0～3V

ID=10mA

RL=300Ω

Vout

D

S

G

10%

90%

10%

90%

V out

ton

toff

Established : 2010-06-30

Revised

: 2013-08-28