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BSS138BKS Datasheet(PDF) 9 Page - NXP Semiconductors |
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BSS138BKS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 18 page BSS138BKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 12 August 2011 9 of 17 NXP Semiconductors BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values ID = 0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values f = 1 MHz; VGS = 0 V (1) Ciss (2) Coss (3) Crss Fig 12. Gate-source threshold voltage as a function of junction temperature Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values VGS (V) 0 3.0 2.0 1.0 aaa-000162 0.2 0.4 0.6 ID (A) 0 (1) (1) (2) (2) Tj = (°C) -60 180 120 060 aaa-000163 1 0.5 1.5 2 a 0 Tj (°C) -60 180 120 060 aaa-000164 1 0.5 1.5 2 VGS(th) (V) 0 (2) (3) (1) aaa-000165 VDS (V) 10-1 102 10 1 10 102 C (pF) 1 (1) (2) (3) |
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