BSS138BKS

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Product data sheet

Rev. 1 — 12 August 2011

9 of 17

NXP Semiconductors

BSS138BKS

60 V, 320 mA dual N-channel Trench MOSFET

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 11. Normalized drain-source on-state resistance as

a function of junction temperature; typical

values

(1) maximum values

(2) typical values

(3) minimum values

Fig 12. Gate-source threshold voltage as a function of

junction temperature

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

0

3.0

2.0

1.0

aaa-000162

0.2

0.4

0.6

(A)

0

(1)

(1)

(2)

(2)

-60

180

120

060

aaa-000163

1

0.5

1.5

2

a

0

-60

180

120

060

aaa-000164

1

0.5

1.5

2

(V)

0

(2)

(3)

(1)

aaa-000165

10

1

10

C

(pF)

1

(1)

(2)

(3)