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HZM62ZFA Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HZM62ZFA Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page  HZM6.2ZFA 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd *1 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note 1. Four device total, See Fig.2. Electrical Characteristics (Ta = 25°C) *1 Item Symbol Min Typ Max Unit Test Condition Zener voltage V Z 5.90 — 6.50 V I Z = 5 mA, 40ms pulse Reverse current I R —— 3 µAV R = 5.5V Capacitance C — 8.0 8.5 pF V R = 0V, f = 1 MHz Dynamic resistance r d —— 60 Ω I Z = 5 mA ESD-Capability *2 — 13 — — kV C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1. Per one device. 2. Failure criterion ; IR > 3 µA at VR = 5.5V. |
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