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HVC362 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HVC362 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page HVC362 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage V R 15 V Junction temperature Tj 125 °C Storage temperature Tstg -55Å`+125 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse current I R1 — — 10 nA V R = 10V I R2 — — 100 V R = 10V, Ta =60°C Capacitance C 1 41.6 — 49.9 pF V R = 1V, f = 1 MHz C 4 10.1 — 14.8 V R = 4V, f = 1 MHz Capacitance ratio n 3.0 — — — C 1 / C4 Series resistance r s — — 2.0 Ω V R = 4V, f = 100 MHz ESD-Capability *1 — 80 — — V *C=200pF,Both forward and reversedirection 1 pulse. Note 1. Failure criterion ; IR ≥20nA at VR = 10 V |
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