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HSU119 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSU119 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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2 / 5 page  HSU119 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage V RM 85 V Reverse voltage V R 80 V Average forward current I O 100 mA Peak rectified current I FM 300 mA Non-Repetitive peak forward surge current I FSM *1 4A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Note: 1. Within 1 µ s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F1 — — 0.8 V I F = 10 mA V F2 — — 1.2 I F = 100 mA Reverse current I R — — 0.1 µAV R = 80V Capacitance C — — 2.0 pF V R = 0V, f = 1 MHz Reverse recovery time *1 t rr — — 3.0 ns I F = 10 mA, VR = 6V RL= 50Ω Note: 1. Reverse recovery time test circuit 3k 0.1µF Ro =50 Rin =50 DC Supply Pulse Generator Sampling Oscilloscope Trigger Ω Ω Ω |
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