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HSS104 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. HSS104
Description  Silicon Epitaxial Planar Diode for High Speed Switching
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HSS104 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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HSS104
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
40
V
Reverse voltage
V
R
35
V
Peak forward current
I
FM
300
mA
Non-Repetitive peak forward surge current
I
FSM*
0.4
A
Average forward current
I
O
110
mA
Power dissipation
Pd
300
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
–65 to +175
°C
Note:
Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
1.2
V
I
F = 10mA
Reverse current
I
R
0.5
µAV
R = 35V
Capacitance
C
3.0
pF
V
R = 0.5V, f = 1MHz
Reverse recovery time
t
rr
3.0
ns
I
F = 10mA, VR = 6V, RL = 50Ω


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