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HSM88AS Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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HSM88AS Datasheet(HTML) 2 Page - Hitachi Semiconductor |
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HSM88AS 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Reverse voltage V R 10 V Average rectified current I O *1 15 mA Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F1 350 — 420 mV I F = 1 mA V F2 500 — 580 I F = 10 mA Reverse current I R1 — — 0.2 µAV R = 2V I R2 ——10 V R = 10V Capacitance C — — 0.85 pF V R = 0V, f = 1 MHz Capacitance deviation ∆C — — 0.10 pF V R = 0V, f = 1 MHz Forward voltage deviation ∆V F ——10 mV I F = 10 mA ESD-Capability *1 — 30 — — V C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V |
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